HUF75645S3ST - onsemi

Manufacturer Part Number

HUF75645S3ST

Manufacturer

onsemi

Introduction

High-performance n-channel MOSFET in a DPAK (TO-263) package designed for high-power applications.

Product Features and Performance

Optimized for high-power, high-efficiency applications

Ultra-low on-resistance for reduced conduction losses

High power density and high current capability

Robust design with excellent thermal performance

Product Advantages

Excellent power efficiency

High power density

Reliable and rugged design

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Maximum Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 14mΩ @ 75A, 10V

Continuous Drain Current (Id): 75A @ 25°C

Input Capacitance (Ciss): 3790pF @ 25V

Power Dissipation (Pd): 310W @ Tc

Quality and Safety Features

RoHS3 compliant

Robust DPAK (TO-263) package

Designed for high-reliability applications

Compatibility

Surface mount package (DPAK)

Application Areas

High-power, high-efficiency applications such as:

- Power supplies

- Motor drives

- Inverters

- Switched-mode power supplies

Product Lifecycle

Currently in active production

No planned discontinuation

Key Reasons to Choose This Product

Excellent power efficiency and high power density

Robust and reliable design for high-power applications

Optimized for high-performance, high-efficiency systems

Wide operating temperature range (-55°C to 175°C)

Surface mount packaging for easy integration