Manufacturer Part Number
FQB8P10TM
Manufacturer
Fairchild (onsemi)
Introduction
The FQB8P10TM is a P-channel power MOSFET transistor designed for a wide range of power management and switching applications.
Product Features and Performance
Voltage rating up to 100V
Low on-resistance of 530mΩ @ 4A, 10V
High continuous drain current of 8A @ 25°C
Wide operating temperature range of -55°C to 175°C
Fast switching performance with low gate charge of 15nC @ 10V
Robust design with high power dissipation of 3.75W (Ta), 65W (Tc)
Product Advantages
Efficient power management through low on-resistance
Reliable operation in harsh environments
High current handling capability
Fast switching for improved system performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 530mΩ @ 4A, 10V
Continuous Drain Current (Id): 8A @ 25°C
Input Capacitance (Ciss): 470pF @ 25V
Power Dissipation: 3.75W (Ta), 65W (Tc)
Quality and Safety Features
Designed and manufactured to high quality standards
Robust package (D2PAK/TO-263) for improved thermal management
Overcurrent and overvoltage protection
Compatibility
Surface mount (SMD) package for easy integration
Compatible with a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Switching regulators
Lighting and LED drivers
Industrial and automotive electronics
Product Lifecycle
Currently in active production
No plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
High voltage and current handling capabilities
Efficient power management through low on-resistance
Fast switching performance for improved system response
Reliable operation in harsh environments
Robust package design for improved thermal management
Compatibility with a wide range of power management applications
FQB8N60CTMonsemiPOWER FIELD-EFFECT TRANSISTOR, 7