Manufacturer Part Number
FQB8N90CTM
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel MOSFET in D2PAK (TO-263) package
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 900V
Maximum gate-to-source voltage (Vgs): ±30V
On-state resistance (Rds(on)): 1.9Ω @ 3.15A, 10V
Continuous drain current (Id): 6.3A @ 25°C (Tc)
Input capacitance (Ciss): 2080pF @ 25V
Power dissipation (Pd): 171W @ 25°C (Tc)
N-channel MOSFET technology
Product Advantages
High voltage handling capability
Low on-state resistance
High current capability
Compact D2PAK (TO-263) package
Key Technical Parameters
Drain-to-source voltage (Vdss): 900V
Gate-to-source voltage (Vgs): ±30V
On-state resistance (Rds(on)): 1.9Ω
Continuous drain current (Id): 6.3A
Input capacitance (Ciss): 2080pF
Power dissipation (Pd): 171W
Quality and Safety Features
AEC-Q101 qualified
RoHS compliant
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial controls
Appliances
Automotive electronics
Product Lifecycle
This product is an active, long-term product offering from Fairchild (onsemi).
Replacement or upgraded products may be available in the future.
Key Reasons to Choose This Product
High voltage handling capability up to 900V
Low on-state resistance for efficient power conversion
High current capability up to 6.3A
Compact D2PAK (TO-263) package for space-constrained designs
AEC-Q101 qualified and RoHS compliant for reliable performance
Suitable for a wide range of high-voltage, high-power applications