Manufacturer Part Number
FQB8P10TM
Manufacturer
onsemi
Introduction
High-performance P-Channel MOSFET transistor designed for power management and control applications.
Product Features and Performance
100V drain-to-source voltage
8A continuous drain current
530mΩ maximum on-resistance
470pF maximum input capacitance
15nC maximum gate charge
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency due to low on-resistance
Robust design for reliable operation
Compact DPAK (TO-263) surface-mount package
Key Technical Parameters
MOSFET technology
P-channel FET type
±30V gate-to-source voltage
4V maximum gate threshold voltage
10V drive voltage for minimum on-resistance
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
Surface-mount compatible
Application Areas
Power management circuits
Motor control
Industrial and consumer electronics
Product Lifecycle
Currently available
No known discontinuation plans
Key Reasons to Choose This Product
High power efficiency and low power loss
Reliable operation in harsh environments
Compact and space-saving package
Suitable for a wide range of power management and control applications