Manufacturer Part Number
FQB8N60CTM
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
600V breakdown voltage
Low on-resistance of 1.2Ω
Continuous drain current of 7.5A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1255pF
Product Advantages
Improved efficiency and reduced power loss
Suitable for high-voltage, high-power applications
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Maximum Gate-to-Source Voltage (VGS): ±30V
On-Resistance (RDS(on)): 1.2Ω @ 3.75A, 10V
Drain Current (ID): 7.5A (continuous @ 25°C)
Input Capacitance (Ciss): 1255pF @ 25V
Power Dissipation: 3.13W (TA), 147W (TC)
Quality and Safety Features
MOSFET technology for reliable performance
Compliant with relevant safety standards
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
High-voltage power conversion
Product Lifecycle
Currently available, no indication of discontinuation
Several Key Reasons to Choose This Product
Excellent performance characteristics, including high voltage rating, low on-resistance, and high current capability
Reliable and robust design for demanding applications
Suitable for a wide range of high-voltage, high-power applications
Efficient and low-loss operation, improving overall system efficiency
FQB8N25Fairchild (onsemi)