Manufacturer Part Number
FQB8N60CTM
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor suitable for a wide range of power switching applications.
Product Features and Performance
600V drain-source voltage rating
Low on-resistance of 1.2Ω @ 3.75A, 10V
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 36nC @ 10V
Robust MOSFET technology with high ruggedness
Product Advantages
Excellent efficiency and power density
Reliable performance in high-voltage, high-power applications
Compact DPAK (TO-263) surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
Drain Current (Id): 7.5A @ 25°C
Input Capacitance (Ciss): 1255pF @ 25V
Power Dissipation: 3.13W @ Ta, 147W @ Tc
Quality and Safety Features
Rugged MOSFET design for high reliability
Tested and qualified for industrial and automotive applications
Compatibility
Compatible with a wide range of power electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade options available from onsemi
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and rugged design for demanding applications
Compact and efficient solution in the DPAK package
Broad operating temperature range and high power handling capacity
