Manufacturer Part Number
FQB8N90CTM
Manufacturer
onsemi
Introduction
High-performance, high-voltage, N-channel, enhancement-mode MOSFET in a TO-263 (DPAK) package.
Product Features and Performance
Drain-to-source voltage (Vdss) of 900V
Extremely low on-resistance (Rds(on)) of 1.9Ω
Continuous drain current (Id) of 6.3A at 25°C
Robust, reliable MOSFET technology
Wide operating temperature range of -55°C to 150°C
Product Advantages
High voltage capability
Low on-resistance for efficient power conversion
High current handling
Compact, space-saving DPAK package
Suitable for a wide range of applications
Key Technical Parameters
Vdss: 900V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 1.9Ω @ 3.15A, 10V
Id (Continuous) @ 25°C: 6.3A (Tc)
Ciss (Max) @ Vds: 2080 pF @ 25V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10V
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for reliable surface mount assembly
Compatibility
Compatible with a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Industrial automation and control
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High voltage capability up to 900V
Extremely low on-resistance for efficient power conversion
High continuous drain current of 6.3A
Compact and reliable DPAK package
Wide operating temperature range of -55°C to 150°C
Suitable for a wide range of high-voltage, high-power applications
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