Manufacturer Part Number
FQB5N50CTM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel MOSFET with low on-resistance and high reliability
Product Features and Performance
Drain-to-source voltage up to 500V
Low on-resistance of 1.4Ω @ 2.5A, 10V
High continuous drain current of 5A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 625pF @ 25V
High power dissipation of 73W at Tc
Product Advantages
Excellent power handling capability
High efficiency and low power loss
Reliable operation in harsh environments
Easy to integrate into power conversion circuits
Key Technical Parameters
Drain-to-source voltage (Vdss): 500V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 1.4Ω @ 2.5A, 10V
Drain current (Id): 5A continuous at 25°C
Input capacitance (Ciss): 625pF @ 25V
Power dissipation (Pd): 73W at Tc
Quality and Safety Features
MOSFET technology for high reliability and ruggedness
Designed and manufactured to meet quality and safety standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
This product is an ongoing, active part of the manufacturer's portfolio
Replacements and upgrades may be available as technology advances
Key Reasons to Choose This Product
High voltage and current handling capability
Excellent power efficiency and low power loss
Reliable operation in harsh environments
Easy integration into power conversion circuits
Manufacturer's reputation for quality and innovation
FQB5N50CTFFairchild (onsemi)
FQB5N40AMI Semiconductor/onsemi