Manufacturer Part Number
FQB55N10TM
Manufacturer
onsemi
Introduction
High performance N-channel MOSFET
Product Features and Performance
100V drain-to-source voltage
55A continuous drain current at 25°C
Very low on-resistance of 26mΩ
High power dissipation of 3.75W at 25°C and 155W at case temperature
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent on-state resistance for low conduction losses
High power handling capability
Suitable for high frequency switching applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 100V
Maximum Gate-to-Source Voltage (VGS): ±25V
On-Resistance (RDS(on)): 26mΩ
Continuous Drain Current (ID): 55A
Power Dissipation (PD): 3.75W (Ta), 155W (Tc)
Operating Temperature: -55°C to 175°C
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for high power, low thermal resistance
Compatibility
Suitable for high frequency switching applications such as DC-DC converters, class-D audio amplifiers, motor drives
Application Areas
Power supplies
Motor control
Inverters
Converters
Product Lifecycle
This is an active product, no discontinuation or replacement planned
Key Reasons to Choose
Excellent on-state resistance for high efficiency
High power handling capability
Wide operating temperature range
Compact DPAK (TO-263) package