Manufacturer Part Number
FQB50N06TM
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device that belongs to the Transistors - FETs, MOSFETs - Single category.
Product Features and Performance
N-Channel MOSFET
60V Drain to Source Voltage
±25V Gate to Source Voltage
22mOhm On-Resistance @ 25A, 10V
50A Continuous Drain Current @ 25°C
1540pF Input Capacitance @ 25V
75W Power Dissipation @ Ta, 120W @ Tc
-55°C to 175°C Operating Temperature
Product Advantages
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Small package size for compact designs
Key Technical Parameters
Drain to Source Voltage: 60V
Gate to Source Voltage: ±25V
On-Resistance: 22mOhm
Continuous Drain Current: 50A
Input Capacitance: 1540pF
Power Dissipation: 3.75W @ Ta, 120W @ Tc
Quality and Safety Features
RoHS3 Compliant
DPAK (TO-263) package
Compatibility
Mounting Type: Surface Mount
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Wide operating temperature range for versatile applications
Small package size for compact designs
Compliant with RoHS3 regulations for environmentally-friendly use
FQB50N06TM MOSAMI Semiconductor/onsemi