Manufacturer Part Number
FQB50N06LTM
Manufacturer
onsemi
Introduction
High performance N-channel MOSFET suitable for high power switching applications
Product Features and Performance
60V drain-source voltage
Very low on-resistance of 21mOhm
Continuous drain current of 52.4A at 25°C case temperature
Wide operating temperature range of -55°C to 175°C
Low gate charge of 32nC at 5V for high-speed switching
Product Advantages
Excellent efficiency in high power applications
Compact DPAK (TO-263) surface mount package
Robust design with high ruggedness and reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 21mOhm
Drain Current (Id): 52.4A
Input Capacitance (Ciss): 1630pF
Power Dissipation: 3.75W (Ta), 121W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with wide temperature range
Compatibility
Surface mount DPAK (TO-263) package
Application Areas
High power switching applications
Motor drives
Switching power supplies
Industrial controls
Electric vehicles
Product Lifecycle
Current product, no plans for discontinuation. Replacements and upgrades available.
Key Reasons to Choose
Excellent efficiency and power handling capability
Compact surface mount package
Wide operating temperature range
Robust and reliable design
FQB50N06TM MOSAMI Semiconductor/onsemi