Manufacturer Part Number
FQB4N80TM
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel MOSFET transistor in a D2PAK (TO-263) package.
Product Features and Performance
800V drain-to-source voltage rating
9A continuous drain current at 25°C
6Ω maximum on-resistance at 1.95A, 10V
880pF maximum input capacitance at 25V
13W power dissipation at 25°C, 130W at case temperature
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power switching
Compact surface-mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 800V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 3.6Ω
Continuous drain current (Id): 3.9A
Input capacitance (Ciss): 880pF
Power dissipation: 3.13W (Ta), 130W (Tc)
Quality and Safety Features
Designed and manufactured to high quality standards
Suitable for safety-critical applications
Compatibility
Surface-mount D2PAK (TO-263) package
Compatible with a variety of power electronics circuits
Application Areas
Switch-mode power supplies
Motor drives
Industrial automation and control
Renewable energy systems
Automotive electronics
Product Lifecycle
This is an active product, not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Compact surface-mount package for space-constrained designs
Proven reliability and quality for safety-critical applications
Compatibility with a wide range of power electronics circuits
FQB4N80 MOSFairchild (onsemi)