Manufacturer Part Number
FQB4N80TM
Manufacturer
onsemi
Introduction
The FQB4N80TM is a high-voltage N-Channel MOSFET from onsemi, designed for use in a variety of power electronic applications.
Product Features and Performance
800V drain-to-source voltage
9A continuous drain current at 25°C
6Ω maximum on-resistance at 1.95A, 10V
880pF maximum input capacitance at 25V
13W power dissipation at 25°C, 130W at case temperature
-55°C to 150°C operating temperature range
Product Advantages
High-voltage capability
Low on-resistance for efficient power conversion
Surface mount DPAK (TO-263) package for compact design
Suitable for various power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
Drain Current (Id): 3.9A (continuous at 25°C)
On-Resistance (Rds(on)): 3.6Ω (max) at 1.95A, 10V
Input Capacitance (Ciss): 880pF (max) at 25V
Power Dissipation (Pd): 3.13W (max) at 25°C, 130W (max) at case temperature
Quality and Safety Features
RoHS3 compliant
Manufactured using robust MOSFET technology
Compatibility
Surface mount DPAK (TO-263) package
Suitable for use in various power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Other high-voltage, high-current power electronics applications
Product Lifecycle
Current product, no information on discontinuation or replacements
Several Key Reasons to Choose This Product
High-voltage capability (800V)
Low on-resistance for efficient power conversion
Compact surface mount DPAK (TO-263) package
Wide operating temperature range (-55°C to 150°C)
Suitable for a variety of power electronics applications
