Manufacturer Part Number
FQB47P06TM-AM002
Manufacturer
onsemi
Introduction
High-performance power MOSFET transistor designed for power conversion and control applications
Product Features and Performance
P-channel MOSFET with low on-resistance and fast switching
Capable of handling continuous drain current up to 47A at 25°C
Wide operating temperature range of -55°C to 175°C
Low gate charge of 110nC at 10V for efficient switching
Low input capacitance of 3600pF at 25V
Product Advantages
Excellent power efficiency and thermal management
Reliable and robust design for demanding applications
Supports high-frequency switching for improved system performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs Max): ±25V
On-resistance (Rds(on) Max): 26mΩ at 23.5A, 10V
Threshold voltage (Vgs(th) Max): 4V at 250A
Quality and Safety Features
RoHS3 compliant
Housed in DPAK (TO-263) package for surface mount applications
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial and automotive electronics
Product Lifecycle
This product is currently in production and actively supported by the manufacturer.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power efficiency and thermal management
Reliable and robust design for demanding applications
Supports high-frequency switching for improved system performance
Wide operating temperature range and RoHS3 compliance
FQB46N15VBSEMI