Manufacturer Part Number
FQB55N10TM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel MOSFET transistor in D2PAK (TO-263) package
Product Features and Performance
100V drain-source voltage
55A continuous drain current at 25°C
Ultra-low on-resistance of 26mΩ @ 27.5A, 10V
High power dissipation of 3.75W at Ta and 155W at Tc
Wide operating temperature range of -55°C to 175°C
Fast switching with 98nC gate charge at 10V
Product Advantages
Excellent power handling and efficiency
Compact and thermally efficient D2PAK package
Robust design for reliable performance
Key Technical Parameters
Vdss: 100V
Vgs (max): ±25V
Rds (on) (max): 26mΩ @ 27.5A, 10V
Id (continuous): 55A @ 25°C
Ciss (max): 2730pF @ 25V
Power Dissipation: 3.75W (Ta), 155W (Tc)
Quality and Safety Features
Qualified to industrial and automotive standards
Robust design for high reliability and safety
Compatibility
Compatible with standard MOSFET gate drive circuits
Application Areas
Power management
Motor drives
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose
Excellent power handling and efficiency
Compact and thermally efficient packaging
Wide operating temperature range
Fast and reliable switching performance
Robust design for high reliability