FQB5N60CTM - onsemi

Manufacturer Part Number

FQB5N60CTM

Manufacturer

onsemi

Introduction

High-voltage N-channel MOSFET transistor

Part of the QFET series

Product Features and Performance

Drain-to-source voltage (Vdss) up to 600V

On-state resistance (RDS(on)) as low as 2.5Ω

Continuous drain current (ID) up to 4.5A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance (Ciss) of 670pF at 25V

Fast switching performance

Product Advantages

Efficient power conversion and control

Reliable high-voltage operation

Compact surface-mount DPAK (TO-263) package

Suitable for a variety of power electronics applications

Key Technical Parameters

Vdss: 600V

Vgs(max): ±30V

RDS(on)(max): 2.5Ω @ 2.25A, 10V

ID(max): 4.5A at 25°C

Ciss(max): 670pF at 25V

Power Dissipation (max): 3.13W at Ta, 100W at Tc

Quality and Safety Features

Robust design for reliable performance

Compliance with relevant safety standards

Compatibility

Suitable for a wide range of power electronics applications, including:

- Switch-mode power supplies

- Motor drives

- Inverters

- Converters

Application Areas

Power conversion and control

Industrial electronics

Automotive electronics

Appliances and consumer electronics

Product Lifecycle

Current production model

No known discontinuation plans

Replacement or upgrade options may be available from the manufacturer

Key Reasons to Choose This Product

High-voltage and high-current capability

Efficient power handling and low on-state resistance

Compact and surface-mountable DPAK (TO-263) package

Wide operating temperature range

Reliable and robust design for long-term performance

Compatibility with a variety of power electronics applications