Manufacturer Part Number
FQB5N90TM
Manufacturer
onsemi
Introduction
High-voltage N-Channel MOSFET
Product Features and Performance
Operates at up to 900V drain-to-source voltage
Extremely low on-resistance of 2.3Ω
Supports up to 5.4A continuous drain current at 25°C case temperature
Wide operating temperature range of -55°C to 150°C junction temperature
Product Advantages
Excellent efficiency and power density
High reliability and ruggedness
Key Technical Parameters
Drain-to-source voltage (Vdss): 900V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 2.3Ω @ 2.7A, 10V
Continuous drain current (Id): 5.4A @ 25°C case temperature
Input capacitance (Ciss): 1550pF @ 25V
Power dissipation: 3.13W @ 25°C ambient, 158W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and ruggedness
Compatibility
Surface mount DPAK (TO-263) package
Application Areas
High-voltage power conversion and control applications
Switched-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent efficiency and power density
Industry-leading low on-resistance
High voltage and current handling capability
Reliable and rugged design
Wide operating temperature range
Surface mount DPAK packaging for easy integration