Manufacturer Part Number
FQB5N60CTM
Manufacturer
Fairchild (onsemi)
Introduction
A high-performance N-channel MOSFET transistor suitable for a wide range of power conversion and control applications.
Product Features and Performance
600V drain-source voltage rating
5 ohm maximum on-resistance
5A continuous drain current at 25°C
670pF maximum input capacitance
13W maximum power dissipation at 25°C, 100W at case temperature
-55°C to 150°C operating temperature range
Product Advantages
Excellent on-resistance and switching performance
High voltage and current handling capability
Compact DPAK package for efficient heat dissipation
Suitable for a variety of power conversion and control applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.5 ohm
Continuous Drain Current (Id): 4.5A
Input Capacitance (Ciss): 670pF
Power Dissipation: 3.13W (Ta), 100W (Tc)
Quality and Safety Features
RoHS compliant
MOSFET technology for reliable performance
Compatibility
Surface mount DPAK (TO-263AB) package
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Power amplifiers
Lighting ballasts
Industrial controls
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage and current handling
Excellent on-resistance and switching performance
Compact and efficient DPAK package
Wide operating temperature range
Suitable for a variety of power conversion and control applications
FQB5N40AMI Semiconductor/onsemi