Manufacturer Part Number
FDMS3664S
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET array in a compact 8-PQFN package.
Product Features and Performance
Two N-channel asymmetrical power MOSFETs in a single package
Low on-resistance, high current handling capability
High power density and efficiency
Suitable for high-frequency, high-current switching applications
Product Advantages
Compact 8-PQFN package
High power density
High efficiency
Asymmetrical configuration for flexible design
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Maximum power: 1W
Drain-to-source voltage (Vdss): 30V
On-resistance (Rds(on)): 8mΩ @ 13A, 10V
Continuous drain current (Id): 13A @ 25°C, 25A
Input capacitance (Ciss): 1765pF @ 15V
Gate threshold voltage (Vgs(th)): 2.7V @ 250µA
Gate charge (Qg): 29nC @ 10V
Quality and Safety Features
Reliable MOSFET technology
Suitable for high-frequency, high-current applications
Complies with relevant safety and quality standards
Compatibility
Surface mount package
Suitable for a wide range of power electronics and power management applications
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Battery management systems
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Compact and high-density package
Efficient and high-performance power MOSFET array
Flexible asymmetrical configuration for design optimization
Reliable and suitable for high-power, high-frequency applications
Wide operating temperature range and compatibility
