Manufacturer Part Number
FDMS3660S
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
2 N-Channel (Dual) Asymmetrical MOSFET
30V Drain to Source Voltage (Vdss)
8mOhm On-Resistance (Rds(on)) @ 13A, 10V
30A Continuous Drain Current (Id) @ 25°C
60A Continuous Drain Current (Id) @ 25°C
1765pF Input Capacitance (Ciss) @ 15V
29nC Gate Charge (Qg) @ 10V
Logic Level Gate (Vgs(th) ≤ 2.7V @ 250A)
Operating Temperature: -55°C to 150°C (TJ)
Power Rating: 1W
Product Advantages
Low on-resistance for improved efficiency
High current capability
Logic level gate drive
Small package size for space-constrained designs
Key Technical Parameters
30V Drain to Source Voltage (Vdss)
8mOhm On-Resistance (Rds(on)) @ 13A, 10V
30A/60A Continuous Drain Current (Id) @ 25°C
1765pF Input Capacitance (Ciss) @ 15V
29nC Gate Charge (Qg) @ 10V
Logic Level Gate (Vgs(th) ≤ 2.7V @ 250A)
Quality and Safety Features
RoHS3 Compliant
Power56 Package
Compatibility
Surface Mount Mounting
Application Areas
Suitable for a wide range of power management, control, and switching applications
Product Lifecycle
Current product, no known plans for discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Low on-resistance for high efficiency
High current capability for demanding applications
Logic level gate drive for easy implementation
Small package size for space-constrained designs
RoHS compliance for environmentally-conscious designs
Proven reliability and quality from onsemi