Manufacturer Part Number
FDMS3660AS
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Array
Product Features and Performance
2 N-Channel MOSFETs in a single package
Optimized for high-frequency, high-efficiency power conversion applications
Low on-resistance for low conduction losses
High current capability up to 30A
Low gate charge for fast switching
Logic-level gate drive
Product Advantages
Efficient power conversion with low conduction losses
High power density design
Simplified circuit design with integrated dual MOSFETs
Reliable performance in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
On-resistance (Rds(on)): 8mΩ @ 13A, 10V
Continuous Drain Current (Id): 13A @ 25°C, 30A
Input Capacitance (Ciss): 2230pF @ 15V
Gate Threshold Voltage (Vgs(th)): 2.7V @ 250μA
Gate Charge (Qg): 30nC @ 10V
Quality and Safety Features
RoHS3 compliant
Qualified for industrial and automotive applications
Robust design and construction for reliability
Compatibility
Standard 8-PowerTDFN package
Suitable for surface mount assembly
Application Areas
High-frequency, high-efficiency power conversion
Switched-mode power supplies (SMPS)
Motor drives
Industrial and automotive electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Compact, integrated dual MOSFET design
Reliable operation in harsh environments
Ease of integration into power conversion systems
Proven track record of quality and reliability from onsemi
