Manufacturer Part Number
FDMS3662
Manufacturer
onsemi
Introduction
The FDMS3662 is a high-performance N-channel MOSFET transistor from onsemi, designed for a wide range of power management and switching applications.
Product Features and Performance
100V drain-to-source voltage (Vdss)
8mΩ maximum on-resistance (Rds(on)) at 8.9A drain current and 10V gate-to-source voltage
4620pF maximum input capacitance (Ciss) at 50V drain-to-source voltage
5W maximum power dissipation at 25°C ambient temperature (Ta), and 104W at 25°C case temperature (Tc)
-55°C to 150°C operating temperature range
Product Advantages
Excellent on-resistance and switching performance for efficient power conversion
High power density and thermal management capabilities
Robust design for reliable operation in diverse applications
Key Technical Parameters
N-channel MOSFET
100V drain-to-source voltage
±20V maximum gate-to-source voltage
9A continuous drain current at 25°C ambient temperature
49A continuous drain current at 25°C case temperature
Quality and Safety Features
RoHS3 compliant
8-PQFN (5x6) package for high-power density and thermal performance
Compatibility
Suitable for a wide range of power management and switching applications, such as DC-DC converters, motor drives, and power supplies.
Application Areas
Power management
Motor drives
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available from onsemi
Several Key Reasons to Choose This Product
Excellent power efficiency and performance through low on-resistance and fast switching
Robust and reliable design for demanding applications
Compact and thermally efficient package for high-density power electronics
Wide operating temperature range for diverse environmental conditions
RoHS3 compliance for environmentally-friendly applications
