Manufacturer Part Number
FDMS3622S
Manufacturer
onsemi
Introduction
The FDMS3622S is a high-performance, dual N-channel asymmetrical power MOSFET designed for a variety of power management applications.
Product Features and Performance
2 N-Channel (Dual) Asymmetrical configuration
25V Drain-to-Source Voltage (Vdss)
5mΩ maximum On-Resistance (Rds(on)) at 17.5A, 10V
1570pF maximum Input Capacitance (Ciss) at 13V
26nC maximum Gate Charge (Qg) at 10V
5A continuous Drain Current (Id) at 25°C, 34A peak
-55°C to 150°C operating temperature range
1W maximum Power Dissipation
Product Advantages
Optimized for high-efficiency power conversion applications
Excellent thermal performance and low On-Resistance
Suitable for high-current, high-frequency switching
Logic-level gate drive for easy control
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 25V
On-Resistance (Rds(on)): 5mΩ max @ 17.5A, 10V
Continuous Drain Current (Id): 17.5A @ 25°C, 34A peak
Input Capacitance (Ciss): 1570pF max @ 13V
Gate Charge (Qg): 26nC max @ 10V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Surface mount package (8-PowerTDFN)
Suitable for various power management applications
Application Areas
Switching power supplies
Motor drives
DC-DC converters
Power inverters
Battery charging systems
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and safe operation
Suitable for high-current, high-frequency applications
Logic-level gate drive for easy control
Surface mount package for compact design
