Manufacturer Part Number
FDMS3669S
Manufacturer
onsemi
Introduction
The FDMS3669S is a dual asymmetrical N-channel PowerTrench MOSFET with low on-resistance and high current capability, designed for use in power management and switching applications.
Product Features and Performance
Low on-resistance of 10 mΩ @ 13 A, 10 V
Continuous drain current of 13 A at 25°C, up to 18 A
Logic level gate drive with 2.7 V threshold
High input capacitance of 1605 pF @ 15 V
24 nC gate charge @ 10 V
Operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance and high power density
Reliable and robust design for demanding applications
Optimized for efficient power conversion and management
Suitable for a wide range of power switching and control applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
On-Resistance (Rds(on)): 10 mΩ @ 13 A, 10 V
Drain Current (Id): 13 A @ 25°C, 18 A
Input Capacitance (Ciss): 1605 pF @ 15 V
Gate Charge (Qg): 24 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for demanding applications
Suitable for high-temperature operation up to 150°C
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Battery management systems
Industrial and consumer electronics
Product Lifecycle
The FDMS3669S is an active product, and there are no plans for discontinuation at this time.
Replacement or upgrade options may be available from onsemi, depending on specific application requirements.
Several Key Reasons to Choose This Product
Excellent thermal performance and high power density
Reliable and robust design for demanding applications
Optimized for efficient power conversion and management
Suitable for a wide range of power switching and control applications
Logic level gate drive with low on-resistance and high current capability
Extended operating temperature range of -55°C to 150°C