Manufacturer Part Number
FDMS4D5N08LC
Manufacturer
onsemi
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
80V drain-to-source voltage
2mΩ maximum on-resistance
17A continuous drain current at 25°C ambient temperature
116A continuous drain current at 25°C case temperature
5100pF maximum input capacitance
5W maximum power dissipation at 25°C ambient temperature
6W maximum power dissipation at 25°C case temperature
-55°C to 150°C operating temperature range
N-channel MOSFET technology
Product Advantages
Low on-resistance for high efficiency
High power handling capability
Small package size for compact designs
Wide operating temperature range
Key Technical Parameters
Vdss: 80V
Vgs(max): ±20V
Rds(on) (max): 4.2mΩ
Id (continuous): 17A (Ta), 116A (Tc)
Ciss (max): 5100pF
Power Dissipation (max): 2.5W (Ta), 113.6W (Tc)
Vgs(th) (max): 2.5V
Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))
Qg (max): 71nC
Quality and Safety Features
RoHS3 compliant
Surface mount package
Compatibility
Can be used in a variety of power electronics applications
Application Areas
Power supplies
Motor drives
Industrial automation
Telecommunications equipment
Consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
High power handling capability
Low on-resistance for high efficiency
Wide operating temperature range
Small package size for compact designs
RoHS3 compliance for environmental safety
