Manufacturer Part Number
FDMS3669S
Manufacturer
Fairchild (onsemi)
Introduction
High-performance dual N-channel power MOSFET in a compact 8-PQFN (5x6) package.
Product Features and Performance
30V drain-to-source voltage
10mΩ (max) on-resistance at 13A, 10V
5mΩ (max) on-resistance at 18A, 10V
13A (Ta) / 24A (Tc) continuous drain current
18A (Ta) / 60A (Tc) continuous drain current
1605pF (max) input capacitance at 15V
2060pF (max) input capacitance at 15V
Logic-level gate
Product Advantages
Compact 8-PQFN (5x6) package
Low on-resistance for high efficiency
High current handling capability
Logic-level gate for easy drive
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
On-resistance (Rds(on)): 10mΩ (max) @ 13A, 10V; 5mΩ (max) @ 18A, 10V
Continuous drain current (Id): 13A (Ta) / 24A (Tc), 18A (Ta) / 60A (Tc)
Input capacitance (Ciss): 1605pF (max) @ 15V, 2060pF (max) @ 15V
Gate threshold voltage (Vgs(th)): 2.7V (max) @ 250μA, 2.5V (max) @ 1mA
Gate charge (Qg): 24nC (max) @ 10V, 34nC (max) @ 10V
Quality and Safety Features
RoHS3 compliant
Meets industrial temperature range of -55°C to 150°C (TJ)
Compatibility
Can be used as a replacement or upgrade for similar power MOSFET products.
Application Areas
Power management systems
Motor control applications
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available. No known plans for discontinuation. Potential upgrades or replacements may become available in the future.
Key Reasons to Choose This Product
Compact 8-PQFN (5x6) package for space-constrained designs
Low on-resistance for high efficiency and performance
High current handling capability for demanding applications
Logic-level gate for easy drive and integration
Meets industrial temperature range for reliability
RoHS3 compliance for environmental responsibility
