Manufacturer Part Number
FDA20N50
Manufacturer
Fairchild (onsemi)
Introduction
High voltage, high current N-channel MOSFET
Product Features and Performance
Drain to Source Voltage (Vdss) of 500 V
On-state Resistance (Rds(on)) of 230 mΩ at 11 A, 10 V
Continuous Drain Current (Id) of 22 A at 25°C
Input Capacitance (Ciss) of 3120 pF at 25 V
Gate Threshold Voltage (Vgs(th)) of 5 V at 250 A
Gate Charge (Qg) of 59.5 nC at 10 V
MOSFET technology
Product Advantages
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Fast switching characteristics
Key Technical Parameters
Drain to Source Voltage (Vdss): 500 V
On-state Resistance (Rds(on)): 230 mΩ
Continuous Drain Current (Id): 22 A
Input Capacitance (Ciss): 3120 pF
Gate Threshold Voltage (Vgs(th)): 5 V
Gate Charge (Qg): 59.5 nC
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
TO-3PN package
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose
High voltage and current capability
Low on-state resistance for efficiency
Fast switching performance
RoHS3 compliance
Through-hole mounting for easy assembly