Manufacturer Part Number
FDA16N50LDTU
Manufacturer
onsemi
Introduction
High-performance N-Channel power MOSFET in a TO-3PN package for high-power applications
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 500V
Continuous Drain Current (Id) of 16.5A at 25°C
On-State Resistance (Rds(on)) of 380mΩ at 8.3A, 10V
Input Capacitance (Ciss) of 1945pF at 25V
Power Dissipation (Ptot) of 205W at 25°C
Product Advantages
Excellent switching performance for high-power applications
High voltage and current handling capability
Low on-state resistance for improved efficiency
Compact TO-3PN package
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)): 5V at 250A
Gate-to-Source Voltage (Vgs): ±30V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a variety of high-power electronics and industrial equipment
Application Areas
Power supplies
Motor drives
Inverters
Industrial control systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent high-voltage and high-current handling capability
Low on-state resistance for improved efficiency
Compact and reliable TO-3PN package
Suitable for a wide range of high-power applications
Backed by onsemi's reputation for quality and reliability