Manufacturer Part Number
FDA16N50
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Single Transistor MOSFET
Product Features and Performance
RoHS3 Compliant
TO-3P-3, SC-65-3 package
Operating Temperature: -55°C to 150°C (TJ)
Drain to Source Voltage (Vdss): 500V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 25V
Power Dissipation (Max): 205W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10V
Product Advantages
High voltage and current handling capability
Low on-resistance
Compact TO-3P-3 package
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.3A, 10V
Current Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Power Dissipation (Max): 205W (Tc)
Quality and Safety Features
RoHS3 Compliant
Operating Temperature: -55°C to 150°C (TJ)
Compatibility
Through Hole Mounting
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact TO-3P-3 package for space-constrained designs
RoHS3 compliance for environmental sustainability
Wide operating temperature range for diverse applications