Manufacturer Part Number
FDA16N50LDTU
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-power N-channel MOSFET transistor
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High drain-to-source voltage: 500V
Low on-resistance: 380mΩ @ 8.3A, 10V
High continuous drain current: 16.5A @ 25°C
Low input capacitance: 1945pF @ 25V
High power dissipation: 205W @ 25°C
Product Advantages
Excellent high-voltage and high-power handling capabilities
Low conduction losses due to low on-resistance
Suitable for various high-power switching and amplification applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 380mΩ @ 8.3A, 10V
Continuous Drain Current (Id): 16.5A @ 25°C
Input Capacitance (Ciss): 1945pF @ 25V
Power Dissipation (Pd): 205W @ 25°C
Quality and Safety Features
Robust through-hole package (TO-3P-3)
Compliant with RoHS directives
Compatibility
Suitable for a wide range of high-power switching and amplification applications
Application Areas
Power supplies
Motor drives
Industrial and home appliances
Inverters
Welding equipment
Product Lifecycle
Currently available
No information on discontinuation or replacement models
Several Key Reasons to Choose This Product
Excellent high-voltage and high-power handling capabilities
Low conduction losses due to low on-resistance
Wide operating temperature range
Robust through-hole package
Suitable for various high-power switching and amplification applications