Manufacturer Part Number
FDA18N50
Manufacturer
onsemi
Introduction
The FDA18N50 is a high-performance N-Channel MOSFET transistor from onsemi.
Product Features and Performance
500V Drain-Source Voltage
19A Continuous Drain Current
265mΩ On-Resistance
2860pF Input Capacitance
60nC Gate Charge
Wide Operating Temperature Range: -55°C to 150°C
High Power Dissipation: 239W
Product Advantages
Excellent Power Handling Capability
Low On-Resistance for Efficient Power Switching
Wide Voltage and Temperature Range
Reliable Performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 265mΩ @ 9.5A, 10V
Continuous Drain Current (ID): 19A
Input Capacitance (Ciss): 2860pF @ 25V
Power Dissipation (Pd): 239W
Quality and Safety Features
RoHS3 Compliant
TO-3PN Packaging for Optimal Thermal Performance
Compatibility
Through-Hole Mounting
Suitable for Power Switching Applications
Application Areas
Power Supplies
Motor Drives
Inverters
Industrial Controls
Product Lifecycle
The FDA18N50 is an active product with no plans for discontinuation.
Replacements and upgrades may be available from onsemi.
Key Reasons to Choose This Product
Excellent power handling and efficiency for demanding applications
Wide operating voltage and temperature range
Reliable and RoHS-compliant design
Compatibility with various power electronics applications