FDA18N50 - Fairchild Semiconductor

Manufacturer Part Number

FDA18N50

Manufacturer

Fairchild (onsemi)

Introduction

High-voltage, high-current N-Channel MOSFET

Product Features and Performance

High drain-source voltage rating (500V)

Low on-resistance (265mΩ) for high efficiency

High continuous drain current (19A)

Wide operating temperature range (-55°C to 150°C)

Low gate charge (60nC) for fast switching

Low input capacitance (2860pF) for high-frequency operation

Product Advantages

Excellent efficiency and power density

Reliable and robust design for demanding applications

Suitable for high-voltage, high-current switching

Ease of use with simple gate drive requirements

Key Technical Parameters

Drain-Source Voltage (Vdss): 500V

Gate-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 265mΩ

Continuous Drain Current (Id): 19A

Input Capacitance (Ciss): 2860pF

Power Dissipation (Tc): 239W

Quality and Safety Features

Designed and manufactured to high quality standards

Robust and reliable performance

Suitable for safety-critical applications

Compatibility

Through-hole mounting (TO-3P-3 package)

Compatible with standard MOSFET gate drivers

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and automotive electronics

Product Lifecycle

Currently in production

Replacements and upgrades available

Key Reasons to Choose

High-performance, high-voltage MOSFET

Excellent efficiency and power density

Reliable and robust design

Suitable for a wide range of high-power applications

Easy to integrate with standard gate drive circuits