SGW30N60 - Infineon Technologies

Manufacturer Part Number

SGW30N60

Manufacturer

Infineon Technologies

Introduction

The SGW30N60 is a single IGBT (Insulated Gate Bipolar Transistor) transistor from Infineon Technologies.

Product Features and Performance

Power rating of up to 250W

Non-Punch Through (NPT) IGBT technology

Collector-emitter breakdown voltage of 600V

Maximum collector current of 41A

Low on-state voltage of 2.4V at 15V gate voltage, 30A collector current

Fast switching with turn-on time of 44ns and turn-off time of 291ns

Gate charge of 140nC

Product Advantages

Robust and reliable performance

Efficient power conversion

Compact and easy to integrate design

Key Technical Parameters

IGBT Type: NPT

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 41A

Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A

Gate Charge: 140nC

Switching Energy: 640J (on), 650J (off)

Td (on/off) @ 25°C: 44ns/291ns

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Through-hole mounting

Compatible with standard IGBT driver circuits

Application Areas

Industrial motor drives

Power supplies

Welding equipment

Induction heating

Uninterruptible power supplies (UPS)

Product Lifecycle

The SGW30N60 is an active product, and Infineon Technologies continues to maintain and support it. Replacement or upgrade options may be available, but the specific details would need to be checked with the manufacturer.

Key Reasons to Choose This Product

Robust and reliable NPT IGBT technology

High power handling capability up to 250W

Fast switching performance with low switching losses

Compact and easy to integrate design

RoHS3 compliance for environmentally-friendly use

Backed by Infineon Technologies' quality and support