Manufacturer Part Number
IRGP4063D1PBF
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
High Power Rating: 330 W
High Voltage Capability: 600 V Collector-Emitter Breakdown Voltage
High Current Handling: 100 A Collector Current, 200 A Pulsed Collector Current
Fast Switching Characteristics: 60 ns Turn-On, 160 ns Turn-Off Delay Time
Low Conduction Losses: 2.14 V Collector-Emitter Saturation Voltage
Efficient Switching: 1.4 J Turn-On, 1.1 J Turn-Off Switching Energy
Wide Operating Temperature Range: -40°C to 175°C
Product Advantages
Excellent power handling and high voltage capability
Fast, efficient switching performance
Wide operating temperature range
Reliable and durable design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600 V
Collector Current: 100 A, 200 A Pulsed
Collector-Emitter Saturation Voltage: 2.14 V
Turn-On/Turn-Off Delay Time: 60 ns / 160 ns
Switching Energy: 1.4 J (on), 1.1 J (off)
Quality and Safety Features
Automotive-grade quality and reliability
RoHS compliant (exemptions may apply)
TO-247-3 package for efficient heat dissipation
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Inverters, converters, and motor drives
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Current product, no discontinuation or replacement information available
Several Key Reasons to Choose This Product
High power and voltage handling capabilities
Fast, efficient switching performance for improved system efficiency
Wide operating temperature range for versatile applications
Reliable and durable design for long-term use
Automotive-grade quality and safety features
