Manufacturer Part Number
IRGP4062DPBF
Manufacturer
Infineon Technologies
Introduction
This product is a single Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies.
Product Features and Performance
Trench IGBT technology
600V collector-emitter breakdown voltage
48A maximum collector current
250W maximum power
Low Vce(on) of 1.95V @ 15V, 24A
Fast reverse recovery time of 89ns
Gate charge of 50nC
Switching energy of 115J (on), 600J (off)
Turn-on/off delay times of 41ns/104ns
Product Advantages
High power density
Low conduction and switching losses
Improved efficiency
Robust and reliable performance
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 48A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89ns
Gate Charge: 50nC
Current Collector Pulsed (Icm): 72A
Switching Energy: 115J (on), 600J (off)
Td (on/off) @ 25°C: 41ns/104ns
Quality and Safety Features
RoHS3 compliant
TO-247AC package for reliable thermal performance
Compatibility
This IGBT is compatible with a wide range of power electronics applications.
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Solar inverters
UPS systems
Product Lifecycle
The IRGP4062DPBF is an active product and is currently available. Infineon Technologies continues to provide support and offer replacements or upgrades as needed.
Several Key Reasons to Choose This Product
High power density and efficiency
Robust and reliable performance
Excellent thermal management
RoHS3 compliance for environmental safety
Wide range of compatible applications
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