Manufacturer Part Number
IRGP4063DPBF
Manufacturer
Infineon Technologies
Introduction
High-power IGBT transistor for industrial and power applications
Product Features and Performance
Trench IGBT design
600V collector-emitter breakdown voltage
96A maximum collector current
14V maximum collector-emitter saturation voltage
115ns reverse recovery time
95nC gate charge
144A maximum pulsed collector current
625μJ turn-on and 1.28mJ turn-off switching energy
60ns turn-on and 145ns turn-off delay times
Product Advantages
Optimized for high-power, high-efficiency applications
Trench IGBT technology provides low conduction and switching losses
High current handling capability
Wide operating temperature range of -55°C to 175°C
Key Technical Parameters
Voltage Rating: 600V
Current Rating: 96A continuous, 144A pulsed
Package: TO-247AC
Quality and Safety Features
RoHS compliant
Qualified to automotive and industrial standards
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Industrial motor drives
Power supplies
Inverters
Welding equipment
Electric vehicles
Product Lifecycle
Currently in active production
Replacements and upgrades available from Infineon
Key Reasons to Choose
High power density and efficiency
Robust and reliable performance
Wide operating temperature range
Proven Infineon IGBT technology
