SGW50N60HS - Infineon Technologies

Manufacturer Part Number

SGW50N60HS

Manufacturer

Infineon Technologies

Introduction

High-performance power transistor for industrial and consumer applications

Product Features and Performance

600V insulated-gate bipolar transistor (IGBT)

Maximum collector current of 100A

Low collector-emitter saturation voltage (Vce(on)) of 3.15V at 50A

Fast switching speeds with turn-on time of 47ns and turn-off time of 310ns

High power handling capability up to 416W

Product Advantages

Optimized for high efficiency and reliability

Compact TO-247-3 package for easy integration

Suitable for a wide range of applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 100A

Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A

Gate Charge: 179nC

Current Collector Pulsed (Icm): 150A

Switching Energy: 1.96mJ

Td (on/off) @ 25°C: 47ns/310ns

Quality and Safety Features

RoHS3 compliant

Suitable for operation in -55°C to 150°C temperature range

Compatibility

Standard IGBT input type

Application Areas

Suitable for industrial and consumer applications requiring high-power switching, such as motor drives, power supplies, and inverters

Product Lifecycle

Current product, not nearing discontinuation

Replacement or upgrade options available from Infineon

Several Key Reasons to Choose This Product

Excellent performance characteristics, including high power handling, low Vce(on), and fast switching speeds

Compact and easy-to-integrate TO-247-3 package

Reliable and efficient operation across a wide temperature range

Compatibility with standard IGBT control circuits

Availability of replacement and upgrade options from the manufacturer