Manufacturer Part Number
SGW20N60
Manufacturer
Infineon Technologies
Introduction
The SGW20N60 is a high-performance insulated-gate bipolar transistor (IGBT) with a maximum collector-emitter voltage of 600V and a maximum collector current of 40A.
Product Features and Performance
Non-punch-through (NPT) IGBT structure
Low on-state voltage drop
Fast switching speed
Low gate charge
High short-circuit withstand capability
Optimized switching characteristics
Product Advantages
Excellent efficiency
High reliability
Compact design
Key Technical Parameters
Collector-Emitter Voltage (VCE(max)): 600V
Collector Current (IC(max)): 40A
On-State Voltage Drop (VCE(on)): 2.4V @ 15V, 20A
Gate Charge (Qg): 100nC
Pulse Collector Current (ICM): 80A
Turn-On/Turn-Off Delay Time: 36ns/225ns
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability applications
Compatibility
Compatible with standard IGBT gate driver circuits
Application Areas
Power inverters
Motor drives
Switching power supplies
Welding equipment
Induction heating
Other industrial power electronics applications
Product Lifecycle
This product is currently in production and not nearing discontinuation. Infineon Technologies offers replacement and upgrade options for this IGBT series.
Key Reasons to Choose This Product
High efficiency and reliability
Fast switching speed and low switching losses
Excellent short-circuit withstand capability
Compact and robust design
Wide range of industrial applications