IGB50N60TATMA1 - Infineon Technologies

Manufacturer Part Number

IGB50N60TATMA1

Manufacturer

Infineon Technologies

Introduction

The IGB50N60TATMA1 is a Trench IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies.

Product Features and Performance

600V Collector-Emitter Breakdown Voltage

100A Collector Current (max)

2V Collector-Emitter Saturation Voltage (max) @ 15V Gate Voltage, 50A Collector Current

310nC Gate Charge

150A Pulsed Collector Current

26ns/299ns Turn-on/Turn-off Delay Time

Suitable for high-power, high-frequency switching applications

Product Advantages

Trench IGBT structure for low conduction and switching losses

High current capability

Fast switching performance

High reliability and ruggedness

Key Technical Parameters

Voltage Rating: 600V Collector-Emitter Breakdown Voltage

Current Rating: 100A Collector Current (max)

Package: TO-263-3, DPak (2 Leads + Tab)

Quality and Safety Features

RoHS3 Compliant

Industrial-grade quality and reliability

Compatibility

This IGBT is compatible with a wide range of high-power, high-frequency switching applications.

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Induction heating

Other industrial and power electronics applications

Product Lifecycle

The IGB50N60TATMA1 is an actively supported product in Infineon's portfolio. There are no plans for discontinuation, and replacement or upgraded products may be available as technology evolves.

Key Reasons to Choose This Product

High current handling capability (100A max)

Fast switching performance (26ns/299ns turn-on/turn-off delay)

Low conduction and switching losses due to Trench IGBT structure

Reliable and rugged industrial-grade quality

RoHS3 compliance for environmentally friendly applications

Compatibility with a wide range of high-power, high-frequency switching applications