Manufacturer Part Number
IPW60R099P6XKSA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET designed for high-frequency, high-efficiency switched-mode power supply (SMPS) and other power conversion applications.
Product Features and Performance
600V blocking voltage
Very low on-state resistance (RDS(on)) of 99mΩ
High current capability of 37.9A (Tc)
Low gate charge (Qg) of 70nC
Optimized for high-frequency, high-efficiency power conversion
Product Advantages
Excellent efficiency and reduced power losses
Improved thermal management
Reduced system size and cost
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 99mΩ
Continuous Drain Current (ID): 37.9A (Tc)
Input Capacitance (Ciss): 3330pF
Power Dissipation (Ptot): 278W (Tc)
Quality and Safety Features
RoHS3 compliant
Industrial-grade reliability and quality
Compatibility
Can be used in a wide range of power conversion and control applications, including:
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Power factor correction (PFC) circuits
Application Areas
High-frequency, high-efficiency power conversion
Industrial and consumer electronics
Renewable energy systems
Product Lifecycle
This product is an active, in-production part from Infineon Technologies. Replacements and upgrades may be available as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and low power losses
High current capability and low on-state resistance
Optimized for high-frequency, high-efficiency power conversion
Reliable and industrial-grade quality
Compatibility with a wide range of power conversion applications
