Manufacturer Part Number
IPW60R120P7
Manufacturer
Infineon Technologies
Introduction
The IPW60R120P7 is a high-performance N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
600V drain-source voltage
120mΩ maximum on-resistance
26A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1544pF
95W maximum power dissipation
Product Advantages
Efficient power switching
High power density
Excellent thermal performance
Reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 120mΩ
Drain Current (Id): 26A
Input Capacitance (Ciss): 1544pF
Power Dissipation (Tc): 95W
Quality and Safety Features
RoHS compliant
Robust TO-247-3 package
Compatibility
Compatible with a wide range of power electronics applications.
Application Areas
Power supplies
Motor drives
Inverters
Automotive electronics
Product Lifecycle
The IPW60R120P7 is an active product. Replacement or upgraded options may be available.
Key Reasons to Choose This Product
Excellent performance in power switching applications
Efficient power handling and thermal management
Reliable and durable design
Widespread compatibility and suitability for various power electronics systems
