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HomeProductsDiscrete Semiconductor ProductsTransistors - FETs, MOSFETs - SingleIPW60R160P6
Infineon Technologies
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See specifications for product details.

IPW60R160P6 - Infineon Technologies

Manufacturer Part Number
IPW60R160P6
Manufacturer
Infineon Technologies
Allelco Part Number
32D-IPW60R160P6
ECAD Model
Parts Description
POWER FIELD-EFFECT TRANSISTOR
Detailed Description
Package
TO-247-3
Data sheet
IPW60R160P6.pdf
In stock: 5360

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Quantity

Specifications

IPW60R160P6 Tech Specifications
Infineon Technologies - IPW60R160P6 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - IPW60R160P6

Product Attribute Attribute Value  
Manufacturer Infineon Technologies  
Vgs(th) (Max) @ Id 4.5V @ 750µA  
Vgs (Max) ±20V  
Technology MOSFET (Metal Oxide)  
Supplier Device Package PG-TO247-3-41  
Series CoolMOS™  
Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V  
Power Dissipation (Max) 176W (Tc)  
Package / Case TO-247-3  
Package Bulk  
Product Attribute Attribute Value  
Operating Temperature -55°C ~ 150°C (TJ)  
Mounting Type Through Hole  
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 100 V  
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V  
FET Type N-Channel  
FET Feature -  
Drive Voltage (Max Rds On, Min Rds On) 10V  
Drain to Source Voltage (Vdss) 600 V  
Current - Continuous Drain (Id) @ 25°C 23.8A (Tc)  

Parts Introduction

Manufacturer Part Number

IPW60R160P6

Manufacturer

Infineon Technologies

Introduction

High performance power MOSFET with CoolMOS technology

Product Features and Performance

Extremely low on-state resistance

Very low gate charge and gate-source charge

Superior switching performance

Excellent reverse recovery behavior

Avalanche rated

Repetitive avalanche rated

Product Advantages

Reduced conduction losses

Improved efficiency

Reduced switching losses

Robust and reliable

Key Technical Parameters

Drain to Source Voltage (Vdss): 600 V

Vgs (Max): ±20 V

Rds On (Max) @ Id, Vgs: 160 mOhm @ 9 A, 10 V

Continuous Drain Current (Id) @ 25°C: 23.8 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V

Power Dissipation (Max): 176 W (Tc)

Quality and Safety Features

Avalanche rated

Repetitive avalanche rated

Robust and reliable design

Compatibility

Compatible with various power electronics applications

Application Areas

Switching power supplies

Motor drives

Induction heating

Solar inverters

Uninterruptible power supplies (UPS)

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available

Key Reasons to Choose This Product

Excellent performance characteristics, including low on-state resistance, fast switching, and high reliability

Suitable for a wide range of power electronics applications

Supported by a reputable manufacturer with a strong track record

Available in a common and widely compatible package

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies IPW60R160P6

Product Attribute IPW60R160P6 IPW60R165CP IPW60R125CP IPW60R120P7
Part Number IPW60R160P6 IPW60R165CP IPW60R125CP IPW60R120P7
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 100 V - 2500 pF @ 100 V 1544 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C 23.8A (Tc) - 25A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Package / Case TO-247-3 - TO-247-3 TO-247-3
Vgs(th) (Max) @ Id 4.5V @ 750µA - 3.5V @ 1.1mA 4V @ 410µA
Mounting Type Through Hole - Through Hole Through Hole
Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V - 125mOhm @ 16A, 10V 120mOhm @ 8.2A, 10V
Supplier Device Package PG-TO247-3-41 - PG-TO247-3-21 PG-TO247-3
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
FET Type N-Channel - N-Channel N-Channel
Package Bulk - Bulk Bulk
Power Dissipation (Max) 176W (Tc) - 208W (Tc) 95W (Tc)
Vgs (Max) ±20V - ±20V ±20V
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V - 70 nC @ 10 V 36 nC @ 10 V
Series CoolMOS™ - CoolMOS™ CoolMOS™
Drain to Source Voltage (Vdss) 600 V - 600 V 600 V
FET Feature - - - -

Shipment

Delivery Time

In-stock items can be shipped within 24 hours. Some parts will be arranged for delivery within 1-2 days from the date all items arrive at our warehouse. And Allelco ships order once a day at about 17:00, except Sunday. Once the goods are shipped, the estimated delivery time depends on the shipping methods and Delivery destination. The table below shows are the logistic time for some common countries.

Delivery Cost

  1. Use your express account for shipment if you have one.
  2. Use our account for the shipment. Refer to the table below for the approximate charges.
(Different time frame / countries / package size has different price.)

Delivery Method

  1. Global Common Shipment by DHL / UPS / FedEx / TNT / EMS / SF we support.
  2. Others more shipping ways, please get in touch with your customer manager.

Common Countries Logistic Time Reference
Region Country Logistic Time(Day)
America United States 5
Brazil 7
Europe Germany 5
United Kingdom 4
Italy 5
Oceania Australia 6
New Zealand 5
Asia India 4
Japan 4
Middle East Israel 6
DHL & FedEx Shipment Charges Reference
Shipment charges(KG) Reference DHL(USD$)
0.00kg-1.00kg USD$30.00 - USD$60.00
1.00kg-2.00kg USD$40.00 - USD$80.00
2.00kg-3.00kg USD$50.00 - USD$100.00
Note:
The above table is for reference only. There may have some data bias for the uncontrollable factors.
Contact us if you have any questions.

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Your Faithful Supply Chain Partner -

Contact us if you have any questions.

  1. Phone
    +00852 9146 4856

Certifications & Memberships

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Infineon Technologies

IPW60R160P6

Infineon Technologies
32D-IPW60R160P6

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