Manufacturer Part Number
IPW60R125P6
Manufacturer
Infineon Technologies
Introduction
The IPW60R125P6 is a N-Channel MOSFET transistor from Infineon's CoolMOS series, designed for high-power switching applications.
Product Features and Performance
600V Drain-Source Voltage
125mΩ maximum On-Resistance at 10V Gate Voltage
30A continuous Drain Current at 25°C
Wide Operating Temperature Range of -55°C to 150°C
Low Input Capacitance of 2660pF
High Power Dissipation of 219W
Product Advantages
Excellent performance for high-power switching applications
Low on-resistance for high efficiency
Wide operating temperature range for versatile use
Compact TO-247-3 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 30A
On-Resistance (Rds(on)): 125mΩ
Input Capacitance (Ciss): 2660pF
Power Dissipation (Ptot): 219W
Quality and Safety Features
Robust TO-247-3 package for reliable operation
Complies with industry safety standards
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Switching power supplies
Motor drives
Industrial electronics
Renewable energy systems
Product Lifecycle
This product is currently in active production and is not near discontinuation.
Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power switching applications
Wide operating temperature range for versatile use
Compact and reliable TO-247-3 package
Cost-effective solution for high-power switching needs
