Manufacturer Part Number
IPW60R099P7XKSA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-channel MOSFET from the CoolMOS P7 series, designed for power supply and industrial applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 600 V
On-state Resistance (Rds(on)) of 99 mOhm @ 10.5 A, 10 V
Continuous Drain Current (Id) of 31 A at 25°C baseplate temperature
Input Capacitance (Ciss) of 1952 pF @ 400 V
Power Dissipation (Tc) of 117 W
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
Excellent energy efficiency due to low on-state resistance
High power density and reliability
Suitable for high-voltage, high-current applications
Key Technical Parameters
N-Channel MOSFET
Vgs(th) (Max) of 4 V @ 530 A
Drive Voltage (Max Rds On, Min Rds On) of 10 V
Gate Charge (Qg) (Max) of 45 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Through-hole mounting in a TO-247-3 package
Compatibility
This MOSFET is compatible with various power supply and industrial applications.
Application Areas
Switch-mode power supplies
Motor drives
Welding equipment
Induction heating
Industrial automation
Product Lifecycle
This MOSFET is an active and widely used product. Infineon Technologies continues to support and manufacture this device, and there are no plans for discontinuation.
Key Reasons to Choose This Product
Excellent energy efficiency and low on-state resistance for high-performance power conversion
Reliable and robust design for demanding industrial applications
Wide operating temperature range and high power density
RoHS3 compliance for environmental sustainability
Comprehensive technical support and product availability from Infineon Technologies
