Manufacturer Part Number
IPW60R099CP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High drain-to-source voltage: 600V
Low on-state resistance: 99mΩ
High drain current rating: 31A at 25°C
Low input capacitance: 2800pF
High power dissipation: 255W
Product Advantages
Excellent thermal performance
Reliable and stable operation
Efficient power conversion
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 99mΩ
Continuous Drain Current (Id): 31A at 25°C
Input Capacitance (Ciss): 2800pF
Power Dissipation (Pd): 255W
Quality and Safety Features
Robust and durable construction
Meets safety and regulatory standards
Compatibility
Suitable for a wide range of high-voltage, high-current power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Power factor correction circuits
Electric vehicle powertrain systems
Product Lifecycle
Current production model
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance characteristics
High reliability and durability
Efficient power handling
Suitable for demanding high-voltage, high-current applications
Wide operating temperature range
