Manufacturer Part Number
IPW60R099C7
Manufacturer
Infineon Technologies
Introduction
High-performance power MOSFET with CoolMOS C7 technology
Product Features and Performance
600V N-Channel MOSFET
Ultra-low on-resistance (RDS(on) = 99mΩ)
Fast switching speed
Low gate charge for high-frequency operation
Optimized for hard-switching and resonant applications
Product Advantages
Excellent efficiency and power density
Reduced system size and weight
Improved thermal management
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 22A (at 25°C)
On-Resistance (RDS(on)): 99mΩ (at 10V, 9.7A)
Input Capacitance (Ciss): 1819pF (at 400V)
Power Dissipation (Ptot): 110W (at 25°C)
Quality and Safety Features
Compliant with RoHS 3 directive
Reliable and robust design
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Induction heating
Solar inverters
Product Lifecycle
Currently in production
Availability of replacements and upgrades
Key Reasons to Choose This Product
Excellent efficiency and power density for improved system performance
Fast switching speed and low gate charge for high-frequency operation
Robust and reliable design for long-term use
Compatibility with a wide range of power electronics applications
Ongoing availability and potential for upgrades
