Manufacturer Part Number
IPT60R150G7XTMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET for power applications
Product Features and Performance
600V breakdown voltage
Low on-resistance of 150mΩ
High current capability of 17A continuous drain current
Low input capacitance of 902pF
Wide operating temperature range of -55°C to 150°C
Low gate charge of 23nC
Product Advantages
Excellent efficiency and low switching losses
Robust and reliable design
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 150mΩ
Continuous Drain Current (Id): 17A
Input Capacitance (Ciss): 902pF
Power Dissipation (Tc): 106W
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Suitable for various power electronics applications, such as power supplies, motor drives, and inverters
Application Areas
Power supplies
Motor drives
Inverters
Industrial electronics
Renewable energy systems
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Excellent efficiency and low switching losses for improved system performance
Robust and reliable design for long-term operation
Versatile compatibility for a wide range of power electronics applications
Comprehensive technical specifications and safety features for demanding applications