Manufacturer Part Number
IPT60R028G7XTMA1
Manufacturer
Infineon Technologies
Introduction
High-performance MOSFET from Infineon's CoolMOS G7 series
Product Features and Performance
600V MOSFET with low on-resistance of 28mΩ
Extremely low gate charge of 123nC at 10V
High-power density with maximum power dissipation of 391W
Wide operating temperature range of -55°C to 150°C
N-channel, surface mount package
Product Advantages
Improved efficiency and performance in power conversion applications
Reduced switching and conduction losses
Compact design with high power density
Reliable and robust performance across wide temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs) Max: ±20V
On-resistance (Rds(on)): 28mΩ @ 28.8A, 10V
Drain Current (Id) @ 25°C: 75A
Input Capacitance (Ciss): 4820pF @ 400V
Power Dissipation (Tc): 391W
Quality and Safety Features
RoHS3 compliant
ESD protection
Robust package design for reliable performance
Compatibility
Compatible with various power conversion and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Renewable energy systems
Industrial automation
Lighting applications
Product Lifecycle
Current product, no discontinuation plans
Upgrades and replacements available as technology advances
Several Key Reasons to Choose This Product
Excellent efficiency and performance in power conversion
Compact design with high power density
Wide operating temperature range for reliable performance
Robust and reliable package design
Compatibility with various power electronics applications
