Manufacturer Part Number
IPT60R055CFD7XTMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage CoolMOS CFD7 MOSFET transistor featuring low on-resistance and high reliability.
Product Features and Performance
600V drain-source voltage rating
55mΩ maximum on-resistance at 15.1A, 10V
44A continuous drain current at 25°C
236W maximum power dissipation at case temperature
-55°C to 150°C operating temperature range
Fast switching and low gate charge for high-efficiency applications
Product Advantages
Excellent performance-to-cost ratio
High reliability and robustness
Optimized for high-frequency, high-efficiency power conversion
Key Technical Parameters
N-channel MOSFET
600V drain-source voltage
±20V maximum gate-source voltage
55mΩ maximum on-resistance
2721pF maximum input capacitance
67nC maximum gate charge
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Can be used in a wide range of power conversion applications
Application Areas
Switched-mode power supplies
Motor drives
Induction heating
Solar inverters
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No plans for discontinuation, replacements available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High reliability and robustness
Optimized for high-frequency, high-efficiency power conversion
Wide operating temperature range
RoHS3 compliance and AEC-Q101 qualification
