Manufacturer Part Number
IPT60R125G7XTMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with CoolMOS G7 technology for efficient power conversion applications
Product Features and Performance
Optimized for high-frequency switching
Low on-state resistance (RDS(on))
Low gate charge (Qg)
Low input capacitance (Ciss)
Fast switching speed
High avalanche energy capability
Low thermal resistance
Product Advantages
Improved efficiency in power conversion
Reduced switching losses
Compact design
Reliable and robust performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 600 V
Gate to Source Voltage (Vgs): ±20 V
On-state Resistance (RDS(on)): 125 mΩ @ 6.4 A, 10 V
Continuous Drain Current (ID): 20 A @ 25°C (Tc)
Input Capacitance (Ciss): 1080 pF @ 400 V
Power Dissipation (Pd): 120 W @ 25°C (Tc)
Threshold Voltage (Vgs(th)): 4 V @ 320 A
Gate Charge (Qg): 27 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for a wide range of power conversion applications, including switching power supplies, motor drives, and inverters
Application Areas
Switch-mode power supplies
Inverters
Motor drives
Uninterruptible power supplies (UPS)
Industrial and consumer electronics
Product Lifecycle
This product is an ongoing part of Infineon's CoolMOS G7 series and is not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent efficiency and performance in high-frequency power conversion applications
Low switching losses and high reliability
Compact and space-saving design
Robust and reliable operation across a wide temperature range
Compatibility with a variety of power conversion systems